Title :
A stain chemical etching rate study and used to detect implant defect
Author :
Miao Wu ; Yi Che
Author_Institution :
Product Anal. Eng. of Quality Dept., Freescale Semicond. (China) Ltd., Tianjin, China
fDate :
June 30 2014-July 4 2014
Abstract :
In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.
Keywords :
elemental semiconductors; etching; failure analysis; semiconductor doping; silicon; Si; Si active area; dope density; dope type; failure analysis; implant defect detection; implant profile; nonuniform implantation; stain chemical etching rate; Decision support systems; Failure analysis; Implants; Integrated circuits; etch rate; failure analysis; implant; stain chemical;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898125
