Novel inverted sample thinning method by ex-situ lift-out

Curtaining effect and sample thickness constraints are always the key factors of limiting the use of ex-situ lift-out technique in advanced semiconductor device analysis. Over the years, in-situ lift-out technique has gradually replaced ex-situ lift-out because it offers greater advantages that can overcome the mentioned problems. A novel technique has been developed to prepare ultra-thin TEM specimens by inverted FIB thinning without the need of installing FIB chamber-mounted probe.