40nm NAND flash reliability failure analysis with identification tools combination

Author

Mei Ying Hsiao ; Yi Heng Chen ; Ling Kuey Yang

Author_Institution

Reliability Testing & Failure Anal. Dept., Powerchip Technol. Corp., Hsinchu, Taiwan

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

274

Lastpage

277

Abstract

In the tradition failure analysis procedure, it is hard to find the physical root cause for 40nm NAND flash reliability testing failure. Because of it has weak micro-leak with repeating and longer metal conducting wire. We used several analysis methods to narrow down the defect location such as OBIRCH (Optical Beam Induced Resistance change) and PVC (Passive Voltage Contrast) to narrow down to 100um. Besides, EBAC (Electron Beam Absorbed Current) combine FIB circuit repair to isolation the failure location to one via. Finally, we preformed the FIB cross section analysis success to find the root cause.

Keywords

NAND circuits; OBIC; electron beam effects; failure analysis; focused ion beam technology; integrated circuit reliability; wires (electric); EBAC; FIB circuit repair; FIB cross section analysis; NAND flash reliability; OBIRCH; PVC; defect location; electron beam absorbed current; failure analysis; failure location; identification tools combination; metal conducting wire; microleak; optical beam induced resistance change; passive voltage contrast; size 40 nm; Electron beams; Failure analysis; Flash memories; Integrated circuits; Metals; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898130

Filename

6898130