Title :
Organic TFT with SiO2-parylene gate dielectric stack and optimized pentacene growth temperature
Author :
Wrachien, Nicola ; Cester, Andrea ; Pinato, Alessandro ; Meneghini, Matteo ; Tazzoli, Augusto ; Meneghesso, Gaudenzio ; Kovac, Jaroslav ; Jakabovic, Jan ; Donoval, Daniel
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
Abstract :
We show that the performances of low cost pentacene-based organic thin-film-transistors can be optimized adjusting the pentacene growth temperature. A performance gain exceeding 10 is obtained if the pentacene is grown with a substrate temperature of 50degC instead 90degC. The saturation drain current is not a monotonic function of the pentacene growth temperature. C-V measurements performed in dark conditions show a negligible hysteresis, but the hysteresis is strongly enhanced if the C-V measurements are performed in light, indicating the presence of photon-activated border traps.
Keywords :
dielectric materials; hysteresis; organic semiconductors; semiconductor growth; semiconductor thin films; silicon compounds; thin film transistors; vacuum deposited coatings; vacuum deposition; C-V measurement; SiO2; SiO2-parylene gate dielectric stack; hysteresis; organic TFT; organic thin film transistor; pentacene growth; photon-activated border traps; saturation drain current; substrate temperature; temperature 50 degC; temperature 90 degC; thermal evaporation method; Character generation; Dielectric substrates; Gold; Hysteresis; Organic thin film transistors; Pentacene; Performance evaluation; Performance gain; Temperature; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331324