• DocumentCode
    2358372
  • Title

    Influence of structural parameters of dielectric wall accelerator structure on wake field

  • Author

    Xu, Rong ; Yan, Ping ; Wang, Jue ; Zhang, Shichang ; Shao, Tao ; Sun, Yaohong

  • Author_Institution
    Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing, China
  • fYear
    2010
  • fDate
    23-27 May 2010
  • Firstpage
    723
  • Lastpage
    726
  • Abstract
    To study the beam instability caused by wake field effect, a dielectric wall accelerator module model consisting of symmetric pulse forming line, micro-stacked insulator and conductor layer was established. The finite integral method was used to simulate the wake field in the accelerating structure of dielectric wall accelerator (DWA) for high-current electron beam, wake potential and wake field impedance were calculated for the single and two accelerating units. Structural parameters of distance between two modules, thickness of metal and dielectric constant of insulator in micro-stacked insulator were changed to study the influence of different parameters on wake field. The results shows the wake potential and wake field impedance was small in x, y direction and different structural parameters can influence the wake field effect. Also it proved the advantage of accelerating cavity length and continuity in the DWA structure.
  • Keywords
    electron beams; insulators; permittivity; wakefield accelerators; beam instability; conductor layer; dielectric constant; dielectric wall accelerator structural parameter; finite integral method; high-current electron beam; linear induction accelerator; microstacked insulator; symmetric pulse forming line; wake field impedance; wake potential; Acceleration; Dielectric constant; Impedance; Insulators; Metals; Particle beams; dielectric wall accelerator; finite integral method; linear induction accelerator; wake field; wake field impedance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator and High Voltage Conference (IPMHVC), 2010 IEEE International
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    978-1-4244-7131-7
  • Type

    conf

  • DOI
    10.1109/IPMHVC.2010.5958461
  • Filename
    5958461