The observation of mobile ion of 40nm node by Triangular Voltage Sweep

Author

Huang, Chao ; Liang, James W. ; Juan, Alfons ; Su, K.C.

Author_Institution

Reliability Technol. & Assurance Div., UMC Inc., Hsinchu, Taiwan

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

332

Lastpage

335

Abstract

Using the different test structures, we investigated the Triangular Voltage Sweep (TVS) variables, e.g. temperature, capacitor area & voltage sweep rate to observe the mobile ion in dielectric layer for Back-end process. We found that temperature 125°C could activate mobile ions. The amount of mobile ion is strongly correlated with tested topology. The amount of mobile ion is also dependent on the voltage sweep rate. Time-dependent dielectric breakdown (TDDB) lifetime will reduce 1 order when mobile ion concentration raise 1 order. It is extremely important to specify the reasonable dielectric area of test structure (intra-metal comb length) for both of TDDB and TVS.

Keywords

electric breakdown; integrated circuit reliability; back end process; dielectric layer; mobile ion; time dependent dielectric breakdown lifetime; triangular voltage sweep; voltage sweep rate; Decision support systems; Failure analysis; Integrated circuits; Bias temperature stress; Time-dependent dielectric breakdown; Triangular Voltage Sweep; capacitor area; comb structure; cupper; intra-metal; mobile ion; temperature; voltage breakdown; voltage sweep rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898164

Filename

6898164