Title :
27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Author :
Umbach, A. ; Passenberg, W. ; Unterborsch, G. ; Mekonnen, G.G. ; Schlaak, W. ; Schramm, C. ; Ebert, W. ; Wolfram, P. ; Bach, H.-G. ; Van Waasen, S. ; Bertenburg, R.M. ; Janssen, G. ; Reuter, R. ; Auer, U. ; Tegude, F.-J.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
Optical front-ends are considered to play a major role in future communication systems operating at bit rates of 20 or even 40 Gbit/s, as well as in mobile communication systems with fibre-optic distribution networks. Consequently, different approaches for the monolithic integration of high-speed receivers for a wavelength of 1.55 /spl mu/m can be found in the literature. In this paper, we report on the first monolithical integration of an optical receiver OEIC, which combines the advantageous high-speed characteristics of the waveguide integrated pin photodiode and of the travelling wave amplifier (TWA) circuit, both based on the InP material system.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; optical receivers; optical waveguide components; p-i-n photodiodes; travelling wave amplifiers; 1.55 micron; 27 GHz; GaInAs-AlInAs; HEMT travelling wave amplifier; OEIC; high-speed optical receiver; monolithic integration; optical front-end; photoreceiver; waveguide fed pin photodiode; Bandwidth; Bit rate; High speed optical techniques; Mobile communication; Monolithic integrated circuits; Optical fiber communication; Optical fiber networks; Optical receivers; Optical waveguides; Optoelectronic devices;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546436
