Title :
Double-gate pentacene TFTs with improved control in subthreshold region
Author :
Cvetkovic, Nenad V. ; Tsamados, Dimitrios ; Sidler, Katrin ; Bhandari, Jyotshna ; Savu, Veronica ; Brugger, Juergen ; Ionescu, Adrian M.
Author_Institution :
Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well-controlled device processing. The positive impact of the top gate voltage control on reducing the leakage current and significantly improving the subthreshold swing of the device is demonstrated. Moreover, this original design shows good promise for the enhancement of ION/IOFF TFT characteristics.
Keywords :
leakage currents; organic semiconductors; photolithography; semiconductor thin films; thin film transistors; duble-gate pentacene TFT; leakage current; photolithography; polyimide substrate; stencil lithography; subthreshold swing; top gate voltage; Dielectric substrates; Electrodes; Laboratories; Leakage current; Lithography; Nanoscale devices; Organic thin film transistors; Pentacene; Polyimides; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331352
