Title :
Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method
Author :
Yandong He ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ. Inst. of Microelectron., Beijing, China
fDate :
June 30 2014-July 4 2014
Abstract :
Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.
Keywords :
MOSFET; semiconductor device reliability; semiconductor device testing; MR-DCIV method; NBTI; multifinger device; negative bias teamperature instability; nondestructive method; pLDMOSFET; self-heating enhanced degradation; Degradation; Fingers; Interface states; Logic gates; Stress; Temperature measurement; Voltage measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898175
