DocumentCode :
2358691
Title :
Nanowire electronics
Author :
Appenzeller, Joerg
Author_Institution :
Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
45
Lastpage :
47
Abstract :
Nanowires are an ideal choice for electronic applications. The underlying reason is that they offer a number of intrinsic properties that make them uniquely suited for low-power applications that require a highly linear device response. In this article we discuss the advantages of nanowires in particular for RF applications emphasizing the critical role of the quantum capacitance for the device operation. We argue that the one-dimensional character of a nanowire is the key enabler for device operation in the quantum capacitance limit and the main reason for a vastly different switching behavior in nanowire field-effect transistors.
Keywords :
capacitance; field effect transistors; low-power electronics; nanoelectronics; nanowires; semiconductor quantum wires; switching; RF applications; intrinsic properties; linear device response; low-power applications; nanowire electronics; nanowire field-effect transistors; one-dimensional property; quantum capacitance; switching; Application software; Ballistic transport; FETs; MOSFETs; Nanoscale devices; Particle scattering; Photonic band gap; Quantum capacitance; Radio frequency; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
ISSN :
1930-8876
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2009.5331359
Filename :
5331359
Link To Document :
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