Title :
Exemplified calculation of stress migration in a 90nm node via structure
Author :
Weide-Zaage, Kirsten
Author_Institution :
Inf. Technol. Lab., Leibniz Univ. Hannover, Hannover, Germany
Abstract :
An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90 nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.
Keywords :
electromigration; nanoelectronics; mass flux divergence equation; migration effects; process-induced stress; size 90 nm; stress free state; stress migration; Atomic measurements; Carbon nanotubes; Composite materials; Conducting materials; Electronic packaging thermal management; Kinetic energy; Semiconductor materials; Stress; Temperature; Thermal conductivity;
Conference_Titel :
Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-7026-6
DOI :
10.1109/ESIME.2010.5464542
