Title :
Total dose and single event effects testing of UTMC commercial RadHardTM gate arrays
Author :
Kerwin, David B. ; Benedetto, Joseph M.
Abstract :
Results from total dose and single event effects testing of a UTMC Microelectronic Systems Commercial RadHardTM gate array standard evaluation circuit (SEC) are reported. Total dose levels up to 300 krad(Si) and error rates of less than 1×10-10 errors/bit-day, with no single event latch-up (SEL), were demonstrated. Results from total dose testing of capacitor test structures from AMI´s 0.6 μm mixed signal process are also reported, indicating the possibility of greater than 200 krad(Si) total dose hardness for 0.6 μm CMOS when processed with the UTMC Commercial RadHardTM process module
Keywords :
CMOS logic circuits; gamma-ray effects; integrated circuit testing; ion beam effects; logic arrays; logic testing; radiation hardening (electronics); 0.6 micron; 300 krad; AMI mixed signal process; RadHard gate arrays; UTMC commercial gate arrays; capacitor test structures; error rates; single event effects testing; standard evaluation circuit; total dose effects testing; Ambient intelligence; Automatic testing; CMOS process; Capacitors; Circuit testing; Foundries; Microelectronics; Radiation hardening; Signal processing; System testing;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731481
