DocumentCode
2360187
Title
Comparison of total dose effects on micropower op-amps: bipolar and CMOS
Author
Lee, C.I. ; Johnston, A.H.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1998
fDate
36000
Firstpage
132
Lastpage
136
Abstract
Micropower op-amps; bipolar and CMOS, from Burr-Brown and Maxim are compared and critical parameters are characterized for total dose response with a 2.7 V power supply voltage. The Burr-Brown bipolar device showed much more degradation than the CMOS device at high dose rate. The results are also compared with a NSC CMOS device. The Maxim bipolar device showed enhanced low dose rate effects
Keywords
CMOS analogue integrated circuits; bipolar analogue integrated circuits; failure analysis; integrated circuit reliability; integrated circuit testing; low-power electronics; operational amplifiers; radiation effects; 2.7 V; Burr-Brown; CMOS type; Maxim; bipolar type; critical parameters; high dose rate effects; low dose rate effects; micropower op-amps; total dose effects; total dose response; Circuit testing; Degradation; Laboratories; Operational amplifiers; Power supplies; Propulsion; Space technology; System testing; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location
Newport Beach, CA
Print_ISBN
0-7803-5109-6
Type
conf
DOI
10.1109/REDW.1998.731492
Filename
731492
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