DocumentCode :
2360214
Title :
Electron Beam-induced Light Emission and Transport in GaN Nanowires
Author :
Tringe, Joseph ; MoberlyChan, Warren ; Stevens, Charles ; Davydov, Albert ; Motayed, Abhishek
Author_Institution :
Chem. & Mater. Sci. Directorate, Lawrence Livermore Nat. Lab., CA
fYear :
2006
fDate :
Sept. 2006
Firstpage :
1
Lastpage :
4
Abstract :
The authors report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined
Keywords :
chemical vapour deposition; electron beams; gallium compounds; light scattering; nanowires; wide band gap semiconductors; GaN; chemical vapor deposition; electron beam; light channeling; light emission; light scattering; light transport; nanowires; Chemical vapor deposition; Coatings; Electron beams; Electron emission; Gallium nitride; Light scattering; Microstructure; Nanowires; Platinum; Wire; GaN; light; nanowire; optical; waveguide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Networks and Workshops, 2006. NanoNet '06. 1st International Conference on
Conference_Location :
Lausanne
Print_ISBN :
1-4244-0391-X
Type :
conf
DOI :
10.1109/NANONET.2006.346228
Filename :
4152811
Link To Document :
بازگشت