Title :
New findings on low frequency noise and mismatching properties in uniaxial strained pMOSFETs
Author :
Kuo, Jack J Y ; Chen, William P N ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.
Keywords :
carrier mobility; nanotechnology; power MOSFET; semiconductor device noise; carrier velocity; critical electric field; device mismatch; low-frequency noise; mobility fluctuation; nanoscale pMOSFETs; strained device; tunneling attenuation length; uniaxial strain intrinsic effect; CMOS technology; Frequency measurement; Lifting equipment; Low-frequency noise; MOSFETs; Nanoscale devices; Noise measurement; Silicon; Strain control; Uniaxial strain;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331461
