Author :
Bidal, G. ; Huguenin, J.L. ; Denorme, S. ; Fleury, D. ; Loubet, N. ; Ydebasque, A. Pou ; Perreau, P. ; Leverd, F. ; Barnola, S. ; Beneyton, R. ; Orlando, B. ; Gouraud, P. ; Salveta, T. ; Clement, L. ; Monfray, S. ; Ghibaudo, G. ; Boeuf, F. ; Skotnicki, T.
Abstract :
This work presents an experimental study in order to evaluate the quality of transport in state-of-the-art gate-all-around devices. 25 nm times 20 nm times 10 nm (LxWxTSi) silicon channel devices with metal/high-k gate all-round stack were characterized electrically in terms of mobility and limiting velocity in order to evaluate the possible occurrence of ballisticity. Conclusions are finally presented in the scope of elementary circuit perspectives.
Keywords :
ballistic transport; carrier mobility; elemental semiconductors; semiconductor devices; silicon; Si; ballistic transport; electrical mobility; elementary circuit perspectives; gate-all-around devices; limiting velocity; metal-high-k gate all-round stack; silicon channel devices; size 10 nm; size 20 nm; size 25 nm; Backscatter; Ballistic transport; Degradation; Doping; MOSFET circuits; Nanoscale devices; Particle scattering; Rough surfaces; Silicon; Surface roughness;
