Title :
Impact of La2O3 Thickness on HfO2/La2O3/Ge capacitors and p-channel MOSFETs
Author :
Andersson, Caroline ; Sousa, Marilyne ; Marchiori, Chiara ; Webb, David J. ; Caimi, Daniele ; Siegwart, Heinz ; Fompeyrine, Jean ; Rossel, Christophe ; Dimoulas, Athanasios ; Panayiotatos, Yerassimos
Author_Institution :
IBM Res. GmbH, Zurich Res. Lab., Rueschlikon, Switzerland
Abstract :
In this study we report on HfO2/La2O3/Ge gate stacks grown by MBE with varying thicknesses of La2O3 for MOS capacitors and pMOSFETs. Negative threshold voltages, around -0.8 V, in combination with scaled devices with an EOT of 1.4 nm shows good characteristics for the La2O3 as a passivation for Ge. Also the effect of various post-metallization anneals in oxygen and forming gas is shown to improve the capacitors and MOSFETs, yielding mobility of 121 cm2/Vs.
Keywords :
MOS capacitors; MOSFET; annealing; elemental semiconductors; germanium; hafnium compounds; lanthanum compounds; passivation; HfO2-La2O3-Ge; MOS capacitors; forming gas; gate stacks; mobility; negative threshold voltages; p-channel MOSFET; passivation; post-metallization annealing; Annealing; High K dielectric materials; Laboratories; MOS capacitors; MOSFETs; Oxidation; Passivation; Scalability; Temperature; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331468
