DocumentCode
2360950
Title
AC simulation aspects of MOS modeling
Author
Foty, Daniel
Author_Institution
Gilgamesh Assoc., Fletcher, VT, USA
fYear
1998
fDate
21-23 Oct 1998
Firstpage
186
Lastpage
189
Abstract
Most discussions of MOS modeling concentrate on DC current descriptions. However, in real circuits, modeling of AC components is of great importance, and this topic receives much less attention than it deserves. This paper examines these issues in detail, noting various shortcomings and methods of overcoming them
Keywords
MOSFET; capacitance; semiconductor device models; simulation; AC simulation; MOS modeling; MOSFET structure; charge conservation; gate capacitance; junction capacitance; Capacitance; Capacitors; Circuit simulation; Equivalent circuits; FETs; MOSFET circuits; P-n junctions; SPICE; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Northcon/98 Conference Proceedings
Conference_Location
Seattle, WA
Print_ISBN
0-7803-5075-8
Type
conf
DOI
10.1109/NORTHC.1998.731534
Filename
731534
Link To Document