• DocumentCode
    236146
  • Title

    Electrical scanning probe microscopes to address industrial nano-metrology needs of integrated circuits and nanoelectronic devices

  • Author

    Kopanski, Joseph J.

  • Author_Institution
    Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2014
  • fDate
    24-29 Aug. 2014
  • Firstpage
    214
  • Lastpage
    215
  • Abstract
    Electrical modes of scanning probe microscopes have found considerable metrology applications in integrated circuits and emerging nano-electronic devices. This paper will review the critical metrology needs that electrical SPMs have addressed in the integrated circuit industry and further applications for the characterization of nano-electronic devices. Solutions to metrology problems addressed by electrical SPM modes including the scanning capacitance microscope (SCM), scanning Kelvin force microscope (SKFM), scanning microwave microscope (SMM), scanning spreading resistance microscope (SSRM), conductive-AFM (c-AFM), and magnetic force microscopy (MFM) will be reviewed.
  • Keywords
    electronics industry; magnetic force microscopy; nanoelectronics; MFM; SCM; SKFM; SMM; SSRM; electrical SPM modes; electrical scanning probe microscope; industrial nanometrology; integrated circuit industry; magnetic force microscopy; nanoelectronic device; scanning Kelvin force microscope; scanning capacitance microscope; scanning microwave microscope; scanning spreading resistance microscope; Magnetic force microscopy; Metrology; Microscopy; Nanoscale devices; Semiconductor device measurement; Surface topography; Transmission line measurements; III–V semiconductor materials; Metrology; scanning probe microscopy; semiconductor device doping; semiconductor-insulator interfaces; semiconductor-metal interfaces; three-dimensional integrated circuits; through silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4799-5205-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2014.6898335
  • Filename
    6898335