Title :
Correlation of ellipsonometric modeling results to observed grain structure for OPO film stacks
Author :
Robinson, Tod E.
Author_Institution :
KLA-Tencor, Orlando, FL, USA
Abstract :
One significant, but potentially variable, parameter in the deposition and subsequent processing of polysilicon is its microstructure. The purpose of this work was to correlate the model parameters, in this case, percentage volume fraction of polysilicon phase components, generated by regression of model dispersion using the Bruggerman effective media approximation to data acquired by the spectroscopic ellipsometry technique. Several samples are prepared, consisting of SiO2/undoped poly-Si/SiO2 film stacks in order to measure their as-deposited average grain sizes. Ellipsonometric data is obtained for the center site of each sample, which are then compared to AFM results from similar samples. Various grain geometry approximations are applied, along with the assumption that the polysilicon structure may be modeled to consist of three components; crystalline Si in a continuous amorphous Si matrix, and voids. A mathematical relationship is established between the percentage concentration of crystalline silicon and the mean grain size for the two cases of equiaxed and columnar microstructures. Results indicate good correlation with AFM measured grain sizes. Additional work is required to further demonstrate the correlation, and develop software applications to enable in-line product monitoring
Keywords :
atomic force microscopy; dielectric thin films; elemental semiconductors; ellipsometry; grain size; integrated circuit measurement; integrated circuit modelling; semiconductor growth; semiconductor thin films; silicon; silicon compounds; surface structure; voids (solid); AFM measured grain sizes; Bruggerman effective media approximation; OPO film stacks; SiO2-Si-SiO2; SiO2/undoped poly-Si/SiO2 film stacks; as-deposited average grain sizes; columnar microstructures; continuous amorphous Si matrix; crystalline Si; crystalline silicon concentration; ellipsonometric data; ellipsonometric modeling; equiaxed microstructures; grain geometry approximations; grain structure; in-line product monitoring; mean grain size; model dispersion regression; model parameters; polysilicon deposition; polysilicon microstructure; polysilicon phase components; polysilicon processing; polysilicon structure; software applications; spectroscopic ellipsometry; voids; volume fraction; Amorphous materials; Crystal microstructure; Crystallization; Dispersion; Ellipsometry; Geometry; Grain size; Size measurement; Solid modeling; Spectroscopy;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731572