New laser and detector structures for mid-infrared

Author

Joullie, A. ; Christol, P. ; Rodriguez, J.B. ; Ait-Kaci, Hassan ; Chevrier, F.

Author_Institution

Centre d´Electronique et de Micro-optoelectronique de Montpellierr, Montpellier Univ., France

Volume

1

fYear

2003

fDate

16-20 Sept. 2003

Firstpage

14

Abstract

The paper presents an overview of semiconductor laser and detector structures for the mid-infrared wavelength range (3-5 μm). Recent progress in new laser systems are described : intersubband quantum cascade lasers (QCLs), interband "W" lasers, and interband quantum cascade lasers (ICLs). All these laser structures employing AlSb, InAs, GaSb and related alloys have the potentiality to reach the challenges of room temperature operation in continuous wave for modern applications. The description of detector structures is focussed on intersubband transition systems based on type-II InAs/GaSb superlattices or InSb/GaSb quantum dots.

Keywords

III-V semiconductors; gallium compounds; indium compounds; infrared detectors; photodetectors; quantum cascade lasers; reviews; semiconductor quantum dots; semiconductor superlattices; GaInAs-AlInAs; ICL; InAs-AlSb; InAs-GaSb; InSb-GaSb; InSb/GaSb quantum dots; QCL; detector structures; interband W lasers; interband quantum cascade lasers; intersubband quantum cascade lasers; intersubband transition systems; mid-infrared wavelength range; room temperature operation; type-II InAs/GaSb superlattices; Gas lasers; Infrared detectors; Laser modes; Laser transitions; Optical superlattices; Quantum cascade lasers; Quantum dot lasers; Semiconductor lasers; Semiconductor superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on

Print_ISBN

0-7803-7948-9

Type

conf

DOI

10.1109/CAOL.2003.1250502

Filename

1250502