DocumentCode
236328
Title
Homogeneity characterization of lattice spacing of silicon single crystals
Author
Waseda, Atsushi ; Fujimoto, Hiroshi ; Zhang, X.W. ; Kuramoto, Naoki ; Fujii, Kenichi
Author_Institution
Nat. Metrol. Inst. of Japan (NMIJ), AIST, Tsukuba, Japan
fYear
2014
fDate
24-29 Aug. 2014
Firstpage
400
Lastpage
401
Abstract
The homogeneity of the lattice spacing of silicon single crystals was investigated by the self-referenced lattice comparator. Strain measurements were performed on single crystals from Avo28 ingot, which was used to determine the Avogadro constant. A swirl pattern was observed for the sample of 9.R1 cut from the Avo28 ingot.
Keywords
crystal defects; crystal structure; deformation; elemental semiconductors; ingots; lattice constants; silicon; strain measurement; 9.R1 Avo28 ingot; Avogadro constant; Si; homogeneity characterization; lattice spacing; self-referenced lattice comparator; single crystals; strain measurements; swirl pattern; Carbon; Crystals; Impurities; Lattices; Nonhomogeneous media; Semiconductor device measurement; Silicon; Avogadro constant; impurity; lattice comparator; lattice spacing; silicon single crystal;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location
Rio de Janeiro
ISSN
0589-1485
Print_ISBN
978-1-4799-5205-2
Type
conf
DOI
10.1109/CPEM.2014.6898428
Filename
6898428
Link To Document