Potential-tunable quantum dot single-electron pump

Author

Ye-Hwan Ahn ; Minky Seo ; Youngheon Oh ; Yunchul Chung ; Myung-Ho Bae ; In-Ho Lee ; Nam Kim

Author_Institution

Dept. of Phys., Korea Univ., Seoul, South Korea

fYear

2014

fDate

24-29 Aug. 2014

Firstpage

436

Lastpage

437

Abstract

We have investigated a metal-gated QD charge pump device whose potential profile can be controlled. The proposed pump is uniquely designed with several metallic gates on a GaAs/AlGaAs two-dimensional electron gas system. We find that the length of 1st current plateau depends on potential profile of the QD. Under optimal conditions, a quantized current plateau with estimated accuracy of ppm level for the output current of ~80 pA at 500 MHz is observed at 4.2 K in the absence of magnetic fields.

Keywords

III-V semiconductors; aluminium compounds; electric potential; gallium arsenide; measurement standards; semiconductor quantum dots; single electron devices; two-dimensional electron gas; GaAs-AlGaAs; frequency 500 MHz; measurement standards; metal-gated QD charge pump device; potential profile; potential-tunable quantum dot single-electron pump; temperature 4.2 K; two-dimensional electron gas system; Accuracy; Electric potential; HEMTs; Logic gates; MODFETs; Magnetosphere; Quantum dots; Measurement; current; measurement standards;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on

Conference_Location

Rio de Janeiro

ISSN

0589-1485

Print_ISBN

978-1-4799-5205-2

Type

conf

DOI

10.1109/CPEM.2014.6898446

Filename

6898446