High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs

Author

Urban, C. ; Emam, M. ; Sandow, C. ; Zhao, Q.T. ; Fox, A. ; Raskin, J.P. ; Mantl, S.

Author_Institution

Inst. of Bio- & Nanosyst., Forschungszentrum Julich, Julich, Germany

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

149

Lastpage

152

Abstract

In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 muA/mum for n-type devices with As segregation and 427 muA/mum for p-type devices with B segregation, respectively. A detailed high-frequency characterization proves the high performance of the devices with cut-off frequencies f_T of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of gate length.

Keywords

MOSFET; Schottky barriers; nickel alloys; silicon alloys; silicon-on-insulator; NiSi; SOI SB-MOSFET; Schottky barriers; drain junctions; frequency 117 GHz; frequency 63 GHz; n-type devices; p-type devices; silicon-on-insulator; size 80 nm; Coplanar waveguides; Etching; Fabrication; Laboratories; MOSFETs; Plasma applications; Schottky barriers; Silicidation; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331620

Filename

5331620