• DocumentCode
    236469
  • Title

    New design of decimal nominal value resistance based on Quantum Hall Array

  • Author

    Zhong Qing ; Wang Xueshen ; Li Jinjin ; Zhou Zhiqiang ; Shi Yong

  • Author_Institution
    Nat. Inst. of Metrol., Beijing, China
  • fYear
    2014
  • fDate
    24-29 Aug. 2014
  • Firstpage
    542
  • Lastpage
    543
  • Abstract
    We reported the new design of quantum Hall array resistances. Two resistances, 100Ω and 1kΩ, were achieved by series and parallel connections of single quantum Hall device based on the AlGaAs/GaAs heterostructure. The relative deviations from the nominal value were -3.42 parts of 108 for both design.
  • Keywords
    Hall effect devices; III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; quantum Hall effect; AlGaAs-GaAs; decimal nominal value resistance; parallel connections; quantum Hall array resistances; quantum Hall effect; resistance 1 kohm; resistance 100 ohm; series connections; single quantum Hall device; Arrays; Bars; Calibration; Circuit synthesis; Metrology; Resistance; Standards; Quantum Hall effect (QHE); quantum Hall array resistance devices (QHAR); quantum Hall array resistance standards (QHARS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4799-5205-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2014.6898499
  • Filename
    6898499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=236469