Analytical modelling of Early voltage and Current Gain of Si1−yGey Heterojunction Bipolar Transistor

Author

Rabbi, Fazle ; Arafat, Yeasir ; Khan, M. Ziaur Rahman

Author_Institution

Dept. of EEE, BUET, Dhaka, Bangladesh

fYear

2011

fDate

25-27 April 2011

Firstpage

53

Lastpage

58

Abstract

Analytical modelling of Early Voltage (V_A) and Common Emitter Current Gain (β) of Heterojunction Bipolar Transistor (HBT) are derived considering field dependent mobility, doping dependent mobility, Band Gap Narrowing (BGN), changes in density of state (DOS) and velocity saturation effect. BGN was considered due to heavy doping and presence of Germanium. The effect of various base doping profiles (Gaussian, exponential and uniform) and germanium profile (trapezoidal/triangular/box) on V_A and β are addressed. The results of the analysis are compared with the data available in the previous research work.

Keywords

Ge-Si alloys; carrier mobility; doping profiles; electronic density of states; energy gap; heterojunction bipolar transistors; semiconductor materials; Si_1-yGe_y; band gap narrowing; common emitter current gain HBT; density of state; doping dependent mobility; doping profiles; field dependent mobility; germanium profile; heterojunction bipolar transistor; velocity saturation effect; Doping profiles; Electric fields; Equations; Germanium; Heterojunction bipolar transistors; Junctions; Common Emitter Current Gain; Early Voltage; Field Dependent Mobility; Gaussian Profile; SiGe base HBT;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on

Conference_Location

Kuala Lumpur

ISSN

2159-2047

Print_ISBN

978-1-61284-388-9

Type

conf

DOI

10.1109/ICEDSA.2011.5959034

Filename

5959034