900 MHz band class E PA using high voltage n-channel transistors in standard CMOS technology

The operation of a single ended CMOS class E power amplifier imposes voltage stresses on the drain terminal of the switching transistor that preclude the use of large bias drain voltages. On this paper, it is presented a design of a high voltage n-channel transistor compatible with CMOS technology that avoids the above limitation. A design methodology based on physical models, which allows the comparison of class E power amplifiers performance, is also presented for the low voltage versus the high voltage options. Simulation results using BSIM3 V3.2, including components losses and a finite feed inductor topology, show that the high voltage approach is the best option to meet an output power design specification of 25 dBm at 900 MHz.