DocumentCode
2365286
Title
Polarization control of 1.3 μm-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
Author
Okuno, Yae L. ; Geske, Jon ; Chiu, Yi-Jen ; DenBaars, Steven P. ; Bowers, John E.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
2002
fDate
2002
Firstpage
17
Lastpage
18
Abstract
A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.
Keywords
gallium arsenide; gallium compounds; indium compounds; infrared sources; laser mirrors; laser transitions; light polarisation; quantum well lasers; surface emitting lasers; wafer bonding; 1.3 μm-wavelength vertical cavity surface emitting laser; 1.3 micron; GaAs; InGaAsP; InP; [100] GaAs-based laser mirrors; [311] InP; long-wavelength InGaAsP MQW VCSELs; orientation-mismatched wafer bonding; polarization control; wafer-bonded; Distributed Bragg reflectors; Lattices; Mirrors; Optical control; Optical pumping; Polarization; Quantum well devices; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041097
Filename
1041097
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