Title :
Silicon ultrasonic horns for thin film accelerated stress testing
Author :
Lee, Chung-Hoon ; Lal, Amit
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
A technique for generating controlled stress on thin films for accelerated stress testing is presented. Silicon-based ultrasonic horn transducers are designed and used to test thin film wires integrated on the transducers. The Webster horn equation was solved using the inverse design method to generate a constant strain area in the horn. A change of 5 Ω (12.5% change) was measured on a gold wire integrated on the horn transducers after a 2 hours cyclic load. Stresses high enough to brake the horn could be generated for fracture study
Keywords :
VLSI; electromigration; high-temperature electronics; integrated circuit interconnections; integrated circuit testing; life testing; ultrasonic materials testing; 2 h; Si; Webster horn equation; accelerated stress testing; constant strain area; cyclic load; fracture study; horn transducers; inverse design method; thin film wires; ultrasonic horns; Design methodology; Equations; Life estimation; Semiconductor thin films; Silicon; Stress control; Testing; Transistors; Ultrasonic transducers; Wires;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991858
