DocumentCode :
2365428
Title :
OMVPE grown 1.3 μm GaInNAs quantum well lasers
Author :
Katsuyama, Tsukuru ; Yamada, Takashi ; Iguchi, Yasuhiro ; Takagishi, Shigenori ; Murata, Michio ; Hashimoto, Jun-ichi ; Ishida, Akira
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fYear :
2002
fDate :
2002
Firstpage :
35
Lastpage :
36
Abstract :
OMVPE grown GaInNAs quantum well lasers with low threshold current (density) of 14.5mA (330A/cm2) at 1.24 μm, and high power operation (>60mW) at 1.30 μm have been achieved.
Keywords :
MOCVD; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.24 micron; 1.3 μm GaInNAs quantum well lasers; 1.3 micron; 1.30 micron; 14.5 mA; 60 mW; GaInNAs; GaInNAs quantum well lasers; OMVPE grown; high power operation; low threshold current; Gallium arsenide; Laboratories; Laser modes; Molecular beam epitaxial growth; Optical materials; Power lasers; Quantum well lasers; Temperature dependence; Threshold current; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
Type :
conf
DOI :
10.1109/ISLC.2002.1041105
Filename :
1041105
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2365428
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