Title :
An assessment of modern IGBT and anti-parallel diode behaviour in hard-switching applications
Author :
Rahimo, Munaf ; Schlapbach, U. ; Kopta, Arnost ; Linder, Stefan
Author_Institution :
ABB Switzerland Ltd, Lenzburg
Abstract :
In this paper we present a detailed assessment of modern IGBT and diode behaviour when operating in a hard-switched mode. The paper covers current and future application trends and the associated performance requirements from the latest IGBT and diode designs in terms of device and circuit interaction under different operating conditions. We cover the challenges met by both device and systems designers to provide the optimum performance, efficiency and reliability in hard-switching applications
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; anti-parallel diode behaviour; circuit interaction; device interaction; hard-switching applications; modern IGBT; Anodes; Circuits; Insulated gate bipolar transistors; Manufacturing; Performance loss; Power electronics; Semiconductor diodes; Silicon; Substrates; Voltage; Device Application; Device Characterisation; Freewheeling Diode; IGBT;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219773
