DocumentCode :
2365879
Title :
Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers
Author :
Kelemen, M.T. ; Weber, J. ; Rogg, J. ; Rinner, F. ; Mikulla, M. ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
fYear :
2002
fDate :
2002
Firstpage :
81
Lastpage :
82
Abstract :
Summary form only given. In order to optimize the brightness of these diode lasers, the dependence of the linewidth enhancement factor and of the beam quality on the device structure parameters was investigated. The active In0.12Ga0.88As quantum well with a thickness of 7 nm is embedded in Al0.2Ga0.8As waveguides and Al0.4Ga0.6As cladding layers.
Keywords :
III-V semiconductors; brightness; gallium arsenide; indium compounds; laser beams; quantum well lasers; ridge waveguides; spectral line breadth; waveguide lasers; Al0.2Ga0.8As; Al0.4Ga0.6As; Al0.4Ga0.6As cladding layers; Al0.2Ga0.8As waveguides; In0.12Ga0.88As; active In0.12Ga0.88As quantum well; beam quality; brightness; device structure parameters; diode lasers; linewidth enhancement factor; ridge-waveguide tapered diode lasers; Brightness; Copper; Diode lasers; Heat sinks; Laser beams; Optical device fabrication; Power generation; Quantum well lasers; Semiconductor lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
Type :
conf
DOI :
10.1109/ISLC.2002.1041128
Filename :
1041128
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2365879
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