Title :
High-temperature operation and thermal analysis of InGaAlP-based oxide-confined red VCSELs
Author :
Takaoka, Keiji ; Ezaki, Mizunori ; Nishigaki, Michihiko ; Hatak, Gen-ichi
Author_Institution :
Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We successfully fabricated high-performance oxide-confined red VCSELs. A low threshold current of 0.5 mA and an extremely high maximum CW lasing temperature of 75C were achieved with a room-temperature lasing wavelength of 666 nm. This low-threshold and high-temperature operation was realized, because the oxide-confined structure is advantageous for making smaller devices, compared to the proton-implanted structure.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; laser transitions; surface emitting lasers; thermal analysis; 0.5 mA; 666 nm; 75 C; InGaAlP; extremely high maximum CW lasing temperature; high-performance oxide-confined red VCSELs; high-temperature operation; low threshold current; low-threshold operation; oxide-confined structure; room-temperature lasing wavelength; Current distribution; Distributed Bragg reflectors; Fabrication; Laboratories; Research and development; Temperature dependence; Temperature distribution; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041134
