Title :
The effect of electron irradiation and proton implantation on and a novel operation of IGBT integrated current sensors
Author :
Shen, Z.J. ; Parthasarathy, V. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
In this paper, the effect of electron irradiation and proton implantation on a punchthrough-type, n-channel, 600 V vertical IGBT and its integrated current sensors is studied. Also, we have applied internal voltage probing to examine the potential surrounding active and MOS integrated sensors
Keywords :
electric current measurement; electric sensing devices; electron beam effects; insulated gate bipolar transistors; ion implantation; proton effects; 600 V; MOS integrated current sensors; active sensors; electron irradiation; internal voltage probing; proton implantation; punchthrough-type n-channel vertical IGBT; Electrons; Fabrication; Insulated gate bipolar transistors; Intelligent sensors; MOSFET circuits; Power electronics; Protons; Pulp manufacturing; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515041
