Title :
The modified HSINFET using the trenched JBS injector
Author :
Kim, Han-Soo ; Kim, Jae-Hyung ; Lee, Byeong-Hoon ; Han, Min-Koo ; Han, Seung Youp ; Choi, Yearn-Ik ; Chung, Sang-Koo
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm2
Keywords :
power field effect transistors; HSINFET; forward conduction current; forward voltage drop; hybrid Schottky injector field effect transistor; latch-up; numerical simulation; p-n junction; trench sidewall Schottky contact; trenched JBS injector; turn-off; Anodes; Electrodes; FETs; Insulated gate bipolar transistors; Numerical simulation; P-n junctions; Power integrated circuits; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515043
