Title :
Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates
Author :
Che, Song-Bek ; Nomura, Ichmu ; Kikuchi, Akihiko ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
In this study, ZnCdSe-based II-VI LDs were fabricated on S-doped [100] oriented InP substrates with InGaAs buffer layers by molecular beam epitaxy, demonstrating the first successful lasing operation. The lasing wavelength was around 560 nm. Lattice matched ZnCdSe single quantum wells with 10 nm in thickness were employed as active region.
Keywords :
II-VI semiconductors; cadmium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; substrates; zinc compounds; 10 nm; 560 nm; InGaAs buffer layers; InP; InP substrates; S-doped [100] oriented InP substrates; ZnCdSe-BeZnTe; ZnCdSe/BeZnTe II-VI laser diodes; active region; band lineup; laser structure; lasing wavelength; lattice matched ZnCdSe single quantum wells; molecular beam epitaxy; yellow-green lasing emission; Capacitive sensors; Degradation; Diode lasers; Gallium arsenide; Indium phosphide; Light emitting diodes; Optical buffering; Optical superlattices; Space vector pulse width modulation; Substrates;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041148
