Title :
Influence of a bonded interface on the DC characteristics of a high voltage bipolar transistor
Author :
Laporte, A. ; Bagneres, M. ; Strutzenberger, D. ; Reynes, J.-M. ; Sarrabayrouse, G.
Author_Institution :
Motorola Semicond. S.A., Toulouse, France
Abstract :
The bonded interface situated in an active layer of a high voltage bipolar transistor (base or collector) leads to a deterioration of the DC characteristics. The electron lifetime modification or the interfacial potential barrier due to the interfacial defects or impurities could be at the origin of these degradations
Keywords :
carrier lifetime; power bipolar transistors; wafer bonding; DC characteristics; bonded interface; defects; electron lifetime; high voltage bipolar transistor; impurities; potential barrier; Bipolar transistors; Charge measurement; Current measurement; Electrical resistance measurement; Lead compounds; Position measurement; Space charge; Temperature; Voltage; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515049
