Title :
Very-fast transmission line pulsing of integrated structures and the charged device model
Author :
Gieser, Horst ; Haunschild, Markus
Author_Institution :
Appl. Test of Integrated Circuits, Fraunhofer-Inst. fur Festkorpertechnol., Munich, Germany
Abstract :
Transmission line pulsing (TLP) is well-established for the IV-characterization of ESD-protection elements. There still is a significant gap between the performance of present TLP-systems and the demands of the Charged Device Model (CDM). A very-fast, narrow-pulse (>3.5 ns), high-current TLP (VF-TLP) is designed to reduce this gap. It is feasible to study the pulsed breakdown of gate oxides and to determine at least the quasi-static IV-characteristics of input structures. Gate oxide breakdown is monitored within the first 6 ns of stress. Correlation with nn-CDM tests is achieved in terms of the failure signature. However, the failure thresholds of VF-TLP and nn-CDM do not correlate.
Keywords :
characteristics measurement; electrostatic discharge; failure analysis; impulse testing; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; 3.5 to 6 ns; ESD-protection elements; IV-characterization; charged device model; failure signature; gate oxide breakdown; gate oxides; input structures; integrated structures; pulsed breakdown; quasi-static IV-characteristics; very-fast transmission line pulsing; Electrostatic discharges; Failure analysis; Impulse testing; Integrated circuit measurements; Integrated circuit modeling; Integrated circuit reliability; Integrated circuit testing; Semiconductor device breakdown;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 1996. Proceedings
Print_ISBN :
1-878303-69-4
DOI :
10.1109/EOSESD.1996.865129
