DocumentCode :
2366584
Title :
Direct measurement of facet temperature up to the melting point and COD in high power 980nm semiconductor diode lasers
Author :
Sweeney, Stephen J. ; Lyons, Leslie J. ; Lock, Daren ; Adams, Alfred R.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fYear :
2002
fDate :
2002
Firstpage :
161
Lastpage :
162
Abstract :
We measure the high-energy emission from high power lasers and extract the facet temperature. Severe heating is observed up to the onset of catastrophic optical damage (COD).
Keywords :
infrared sources; laser beam effects; laser transitions; optical testing; semiconductor device measurement; semiconductor device testing; semiconductor lasers; temperature measurement; 980 nm; catastrophic optical damage; direct measurement; high power 980nm semiconductor diode lasers; high power lasers; high-energy emission; laser diode facet temperature measurement; severe heating; Absorption; Erbium-doped fiber lasers; Face detection; Heating; Optical attenuators; Power lasers; Power measurement; Semiconductor lasers; Stimulated emission; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
Type :
conf
DOI :
10.1109/ISLC.2002.1041166
Filename :
1041166
Link To Document :
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