Title :
Synthesis of In2O3 nanowires, nanobouquets and nanopins
Author :
Ji, X.H. ; Zhai, J.W.
Author_Institution :
Functional Mater. Res. Lab., Tongji Univ., Shanghai
Abstract :
Semiconducting oxide In2O3 nanostructures were prepared by reduction of In2O3 powder at 650 degC through vapour-phase transport process. In2O3 nanowires, nanobouquets and nanopins were obtained. The obtained In2O3 nanostructures were characterized by the X-ray diffraction measurement, scanning electron microscopy, and transmission electron microscopy.
Keywords :
X-ray diffraction; indium compounds; nanostructured materials; nanotechnology; nanowires; reduction (chemical); scanning electron microscopy; semiconductor materials; semiconductor quantum wires; transmission electron microscopy; In2O3; X-ray diffraction; nanobouquets; nanopins; powder; reduction; scanning electron microscopy; semiconducting oxide nanowires; temperature 650 C; transmission electron microscopy; vapour-phase transport process; Nanoelectronics;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585508
