Backside-Process-Induced Junction Leakage and Process Improvement of Cu TSV Based on Cu/Sn and BCB Hybrid Bonding

Author

Yao-Jen Chang ; Cheng-Ta Ko ; Tsung-Han Yu ; Cheng-Hao Chiang ; Kuan-Neng Chen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

34

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

435

Lastpage

437

Abstract

Wafer-level 3-D integration using Cu through-silicon vias (TSVs) and fine-pitch Cu/Sn-BCB hybrid bonding is investigated with electrical leakage current. With the well-fabricated Cu TSVs and Cu/Sn bond structures, the leakage current path in this scheme due to backside process was found, and the corresponding mechanism is discussed. The leakage current can be solved by the modified backside process. The improved 3-D integration scheme shows extremely low leakage current and no visible defects inside Cu TSV.

Keywords

copper; leakage currents; three-dimensional integrated circuits; tin; wafer bonding; Cu-SN; backside-process-induced junction leakage; bond structures; electrical leakage current; fine-pitch-BCB hybrid bonding; process improvement; through-silicon vias; wafer-level 3D integration; Bonding; Junctions; Leakage current; Silicon; Through-silicon vias; Tin; 3-D integration; Hybrid bonding; leakage current; through-silicon via (TSV);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2238213

Filename

6417948