Title :
Optical and electrical properties of a-InGaAs:H films prepared by double-target magnetron Co-sputtering
Author :
Yanping Yao ; Chunling Liu ; Zhongliang Qiao ; Mei Li ; Xin Gao ; Baoxue Bo
Author_Institution :
Coll. of Inf. & Technol., Jilin Normal Univ., Siping
Abstract :
Film growth is carried out in the growth ambient with H2/Ar ratios ranging from 0 to 0.4 at a constant working pressure of 1 Pa by magnetron co-sputtering with the targets of InAs and GaAs. The composition, and structure characterization have been measured by electron diffraction spectrum( EDS) and X-ray diffraction(XRD).The optical properties and electrical properties of amorphous InGaAs:H (alpha-InGaAs:H) films have been studied by spectrophotometer and microampere meter. The optical band gap of alpha-InGaAs:H thin film shifts to higher energies with increasing H2/Ar ratios from 0.1 to 0.4. At the same time, dark conductivity and photo-sensitivity properties are related to H2/Ar ratios. These results indicate that hydrogen has passivation effect on alpha-InGaAs:H thin films significantly.In addition, the temperature characteristic of the sample was investigated.
Keywords :
III-V semiconductors; X-ray diffraction; amorphous semiconductors; dark conductivity; electron diffraction; gallium arsenide; gallium compounds; hydrogen; indium compounds; optical constants; passivation; photoconductivity; semiconductor growth; semiconductor thin films; sputter etching; InGaAs:H; X-ray diffraction; amorphous films; dark conductivity; double-target magnetron co-sputtering; electrical properties; electron diffraction spectrum; microampere meter; optical band gap; optical properties; passivation; photo-sensitivity; pressure 1 Pa; spectrophotometer; thin film growth; Amorphous magnetic materials; Amorphous materials; Argon; Electric variables measurement; Electron optics; Gallium arsenide; Magnetic properties; Optical diffraction; Optical films; X-ray diffraction;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585517
