Title :
350 V carrier injection field effect transistor (CIFET) with very low on-resistance and high switching speed
Author :
Sugawara, Y. ; Nemoto, M. ; Nemoto, Y. ; Akakawa, H.
Author_Institution :
Res. Lab., Hitachi Ltd., Japan
Abstract :
To realize low on-state voltage and high switching speed, a new device, a CIFET (Carrier Injection Field Effect Transistor), is proposed. The fabricated 350 V lateral CIFET has a low on-state voltage of less than 0.8 V at 100 A/cm2, which is difficult to be achieved by IGBTs, ESTs and MCTs. Its fall time is reduced to about 0.2 μs by electron irradiation. Early removal of the injected gate current (more than 5 μs) before removing the MOS gate voltage shortens the fall time to about 70 ns
Keywords :
field effect transistor switches; power field effect transistors; power semiconductor switches; 0.8 V; 2 mus; 350 V; 70 ns; CIFET; MOS gate voltage; carrier injection; electron irradiation; field effect transistor; high switching speed; injected gate current; low on-resistance; Biomedical electrodes; Conductivity; Current density; Electrons; FETs; Insulated gate bipolar transistors; Laboratories; Low voltage; MOSFETs; Medical simulation;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515080
