A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)

Author

Chen, Min ; Lutz, Josef ; Domeij, M. ; Felsl, Hans Peter ; Schulze, Hans-Joachim

Author_Institution

Chemnitz Univ. of Technol.

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn⁺ junction and accordingly avoid the avalanche generation at the nn⁺ junction. The CIBH diode concept provides, compared to diodes without p layers and the same design, significantly improved dynamic ruggedness and improved soft reverse recovery at low current densities. Simulations and results of the first fabricated diodes show the realizability of this new promising diode concept

Keywords

p-i-n diodes; power semiconductor diodes; semiconductor doping; 3.3 kV; CIBH; buried floating p layers; controlled injection of backside holes; diode structure; dynamic ruggedness; low current densities; n-n⁺ junction; soft reverse recovery; Avalanche breakdown; Cathodes; Character generation; Chemical technology; Circuits; Clamps; Current density; Diodes; Electromagnetic interference; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666058

Filename

1666058