Analysis of defect structures in single crystals by ion scattering and channelling

Author

Rasulov, Akbarali

Author_Institution

Inf. Technol. Ferghana Branch, Tashkent Univ., Ferghana

fYear

2007

fDate

26-28 Sept. 2007

Firstpage

1

Lastpage

5

Abstract

The defect structures such as surface atomic steps and point defects have been studied by computer simulation of ion scattering and channelling processes. The energy and angular distributions of ions scattered and dechannelled from semi-infinite and isolated steps on the Cu(100) and GaP(100) surface as well as the characteristics of particles channelled through Cu(100) with point defect structures have been calculated. It was shown that the low energy ion scattering and channelling can be use successfully for analysis of defect structures in single crystals.

Keywords

III-V semiconductors; channelling; copper; crystal structure; gallium compounds; ion-surface impact; point defects; vacancies (crystal); wide band gap semiconductors; Cu; GaN; channelling processes; defect structures; low-energy ion scattering; point defects; radiation-induced vacancy defects; single crystals; surface defects; Atomic layer deposition; Atomic measurements; Computer simulation; Crystals; Information analysis; Information technology; Particle beams; Particle scattering; Solids; Spectroscopy; channeling; computer simulation; ion scattering; point defects; surface atomic steps;

fLanguage

English

Publisher

ieee

Conference_Titel

Internet, 2007. ICI 2007. 3rd IEEE/IFIP International Conference in Central Asia on

Conference_Location

Tashkent

Print_ISBN

978-1-4244-1007-1

Type

conf

DOI

10.1109/CANET.2007.4401697

Filename

4401697