DocumentCode :
2367263
Title :
Analysis of defect structures in single crystals by ion scattering and channelling
Author :
Rasulov, Akbarali
Author_Institution :
Inf. Technol. Ferghana Branch, Tashkent Univ., Ferghana
fYear :
2007
fDate :
26-28 Sept. 2007
Firstpage :
1
Lastpage :
5
Abstract :
The defect structures such as surface atomic steps and point defects have been studied by computer simulation of ion scattering and channelling processes. The energy and angular distributions of ions scattered and dechannelled from semi-infinite and isolated steps on the Cu(100) and GaP(100) surface as well as the characteristics of particles channelled through Cu(100) with point defect structures have been calculated. It was shown that the low energy ion scattering and channelling can be use successfully for analysis of defect structures in single crystals.
Keywords :
III-V semiconductors; channelling; copper; crystal structure; gallium compounds; ion-surface impact; point defects; vacancies (crystal); wide band gap semiconductors; Cu; GaN; channelling processes; defect structures; low-energy ion scattering; point defects; radiation-induced vacancy defects; single crystals; surface defects; Atomic layer deposition; Atomic measurements; Computer simulation; Crystals; Information analysis; Information technology; Particle beams; Particle scattering; Solids; Spectroscopy; channeling; computer simulation; ion scattering; point defects; surface atomic steps;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Internet, 2007. ICI 2007. 3rd IEEE/IFIP International Conference in Central Asia on
Conference_Location :
Tashkent
Print_ISBN :
978-1-4244-1007-1
Type :
conf
DOI :
10.1109/CANET.2007.4401697
Filename :
4401697
Link To Document :
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