DocumentCode :
2367264
Title :
New OMCVD precursors for selective copper metallization
Author :
Norman, John A T ; Muratore, Beth A. ; Dyer, Paul N. ; Roberts, David A. ; Hochberg, Arthur K.
Author_Institution :
SCHUMACHER, Carlsbad, CA, USA
fYear :
1991
fDate :
11-12 Jun 1991
Firstpage :
123
Lastpage :
129
Abstract :
A novel OMCVD process for the highly selective deposition of pure, adherent, low resistivity copper films onto conductive substrates is described. Central to this process is a new volatile liquid copper+1 precursor, Cupra Select, designed to thermally disproportionate at low temperatures to cleanly give copper metal and volatile non-corrosive by-products. Thus, selective depositions onto metallic versus insulating dielectric substrates are achieved between 120 to 420°C with growth rates in excess of 100 nm/min and grain sizes as low as 0.1 microns. In addition, a novel complementary copper etching process is discussed that is chemically compatible with the copper CVD chemistry
Keywords :
chemical vapour deposition; copper; integrated circuit technology; metallisation; 120 to 420 degC; Cupra Select; OMCVD precursors; complementary etching process; conductive substrates; grain sizes; growth rates; selective Cu metallisation; selective deposition; volatile liquid Cu+1 precursor; Chemical processes; Conductive films; Conductivity; Copper; Dielectric substrates; Dielectrics and electrical insulation; Etching; Grain size; Metallization; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
Type :
conf
DOI :
10.1109/VMIC.1991.152975
Filename :
152975
Link To Document :
بازگشت