Title :
Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
Author :
Rahimo, M. ; Kopta, A. ; Linder, S.
Author_Institution :
ABB Switzerland Ltd., Lenzburg
Abstract :
In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state losses Vce(sat) and turn-off losses Eoff (i.e. technology curve) was solely realized by means of planar cell enhancement. Simultaneously, high levels of turn-off ruggedness (RBSOA) were obtained with the new cell design. The enhanced-planar IGBT technology is implemented on the soft-punch-through (SPT) buffer concept for ensuring controllable and soft switching behaviour. The paper covers design details of the enhanced-planar technology and a full set of results for the 6500V EP-IGBT chip
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; 6.5 kV; IGBT planar technology; RBSOA; SOA capability; SPT buffer; enhanced-planar IGBT; on-state losses; planar cell enhancement; soft switching; soft-punch-through; technology curve; turn-off losses; turn-off ruggedness; Anodes; Controllability; Cooling; Insulated gate bipolar transistors; Paper technology; Performance loss; Prototypes; Robustness; Semiconductor optical amplifiers; Voltage control;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666064
