Title :
Effect of different gas medium on carbon nanotubes synthesis by arc discharge
Author :
He, Xianojun ; Zheng, Mingdong ; Zhang, Xiaoyoung ; Yan, Shancheng
Author_Institution :
Sch. of Chem. & Chem. Eng., Anhui Univ. of Technol., Maanshan
Abstract :
Carbon nanotubes (CNTs) were synthesized in different gas medium by arc discharge. Optical emission spectroscopy (OES) was used in situ to investigate the formation mechanism of CNTs. Field emission scanning electron microscope (FE-SEM) and transmission electron microscope (TEM) were used to characterize CNTs. FE-SEM observation reveals that a few CNTs synthesized in N2/C2H2/CO2 medium (CNTsN2/C2H2/CO2) are open-ended or porous ones and the impurity amount adhered on CNTsN2/C2H2/CO2 or CNTsHe/C2H2/CO2 is smaller than that adhered on CNTsN2/C2H2 or CNTsHe. TEM characterization results show that the wall of CNTsN2/C2H2/CO2 is partly damaged because of being oxidized, which led to its diameter is smaller than that of CNTsN2/C2H2. OES diagnosis results show that active radicals including C2 and CH are the precursors of CNTs formation while CO2 acts as the etching species to eliminate amorphous carbon in the presence of CO2. A possible formation process of CNTs is proposed on the basis of the results of OES diagnosis and FE-SEM as well as TEM observation.
Keywords :
carbon nanotubes; etching; field emission electron microscopy; nanotechnology; scanning electron microscopy; transmission electron microscopy; C; FE-SEM; TEM; amorphous carbon; arc discharge; carbon nanotube synthesis; etching; field emission scanning electron microscope; optical emission spectroscopy; transmission electron microscope; Arc discharges; Carbon nanotubes; Electron emission; Electron optics; Helium; Impurities; Scanning electron microscopy; Spectroscopy; Stimulated emission; Transmission electron microscopy; Arc discharge; Carbon nanotube; Formation mechanism; Optical emission spectroscopy;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585546