DocumentCode
2367448
Title
Design of functional nodes for telecommunication devices based on Photo- Voltaic and Injection-Voltaic Effects.
Author
Aripov, Kh.K. ; Bustanov, Kh.Kh. ; Edkov, E. V Ob ; Nasirkhodjaev, F.R.
Author_Institution
Tashkent Univ. of Inf. Technol., Tashkent
fYear
2007
fDate
26-28 Sept. 2007
Firstpage
1
Lastpage
4
Abstract
The work is devoted to synthesis optoelectronic circuits of receiving nodes for telecommunication devices with amplification featuring enhanced work stability at high values of collector-emitter voltage, high working currents, i.e. in a mode with high dissipation power (several times higher comparing with any known modes of operations), which enables independent optimization of value of spectral sensitivity and amplification factor.
Keywords
amplification; optimisation; photovoltaic effects; spectral analysis; amplification factor; collector-emitter voltage; injection-voltaic effects; optimization; photovoltaic effects; spectral sensitivity; telecommunication devices; Bipolar transistors; Circuits; Electric breakdown; Force feedback; P-n junctions; Photodiodes; Photovoltaic systems; Solar power generation; Temperature; Voltage; Injection-Voltaic Effect; Photo-Voltaic Effect; Photoconverter with amplification;
fLanguage
English
Publisher
ieee
Conference_Titel
Internet, 2007. ICI 2007. 3rd IEEE/IFIP International Conference in Central Asia on
Conference_Location
Tashkent
Print_ISBN
978-1-4244-1007-1
Type
conf
DOI
10.1109/CANET.2007.4401705
Filename
4401705
Link To Document