Title :
Two-Carrier Current Saturation in a Lateral Dmos
Author :
Lin, John ; Hower, Philip L.
Author_Institution :
Texas Instruments Inc., Manchester, NH
Abstract :
Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual "expansion" in the drain characteristic emerges. This new device behavior is described and a mechanism for the "expansion" proposed
Keywords :
MOSFET; carrier mobility; semiconductor device reliability; Ldmos transistors; drain current; lateral Dmos; parasitic bipolar transistor; two-carrier current saturation; Bipolar transistors; Current density; Electrons; Impact ionization; Instruments; Kirk field collapse effect; Physics; Resistors; Semiconductor optical amplifiers; Space charge;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666078
